Study of Cutoff Frequency of High Collector Current Density in SiGe Single-Heterojunction Bipolar Transistor
- 1 Center for Applied Research in Electronics, Indian Institute of Technology Delhi Hauz-Khas, New-Delhi-110016, India
Abstract
The cutoff frequency performance of an NPN Si/SiGe/SiGe Single-heterojunction bipolar transistor (SiGe SHBT) at high collector current densities has been analyzed using a 2-dimensional MEDICI device simulator. A conventional NPN Si/SiGe/Si Double-heterojunction bipolar transistor (SiGe DHBT) having uniform 14%Ge in the base region has been investigated for comparison. The analysis shows the formation of a retarding potential barrier for minority carrier electrons at the basecollector heterojunction of the DHBT structure. Whereas, the base-collector homojunction of the SiGe SHBT structure, having a uniform 14%Ge profile in its base and collector, inhibits the formation of such a retarding potential barrier. The SHBT structure with a base-collector homojunction shows an Improved cutoff frequency at a high collector current density in comparison with conventional SiGe DHBT, which makes it more promising for high speed, scaled down, field-specific applications.
DOI: https://doi.org/10.3844/ajassp.2004.236.239
Copyright: © 2004 G. M. Khanduri and B. S. Panwar. This is an open access article distributed under the terms of the
Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
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Keywords
- Band Gap Narrowing
- Drift Velocity
- Mobile Communication
- Valence Band Offset